InAs nanowire metal-oxide-semiconductor capacitors

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

A recombination-controlled tunneling model is used to explain the strong frequency dispersion seen in the accumulation capacitance and conductance of dielectric/n-In0.53Ga0.47As metal-oxidesemiconductor capacitors. In this model, the parallel conductance is large when, at positive gate biases, the metal Fermi level lines up with a large density of interface states in the In0.53Ga0.47As band gap...

Physical and electrical characterizations of metal-oxide-semiconductor capacitors

Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arse...

Ionic behavior of organic-inorganic metal halide perovskite based metal-oxide-semiconductor capacitors.

Organic-inorganic metal halide perovskites are promising semiconductors for optoelectronic applications. Despite the achievements in device performance, the electrical properties of perovskites have stagnated. Ion migration is speculated to be the main contributing factor for the many unusual electrical phenomena in perovskite-based devices. Here, to understand the intrinsic electrical behavior...

High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness